M. Rousseau Vis

*	2007
1	EE	B. Benbakhti, M. Rousseau, J.-C. De Jaeger: Physical study of the dissipated power area in high electron mobility transistors for thermal modelling. Microelectronics Journal 38(1): 7-13 (2007)

Coauthor Index

1	B. Benbakhti	[1]
2	J.-C. De Jaeger	[1]