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M. Badila Vis

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*2001
1EEM. Badila, Philippe Godignon, J. Millán, S. Berberich, G. Brezeanu: The electron irradiation effects on silicon gate dioxide used for power MOS devices. Microelectronics Reliability 41(7): 1015-1018 (2001)

Coauthor Index

1S. Berberich [1]
2G. Brezeanu [1]
3Philippe Godignon [1]
4J. Millán [1]

Copyright © Tue Nov 3 08:52:44 2009 by Michael Ley (ley@uni-trier.de)